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Sputtering
System
Magnetron sputtering systems can be used to deposit virtually all
metals, alloys and compounds and offer some distinct advantages
over thermal evaporation techniques:
- Constant composition for materials that tend
to dissociate
- No contamination from crucibles, filaments or
boats
- Minimizes substrate heating and promotes superior
adhesion
- Achieves higher deposition rates and denser film
structures
BOC Edwards advanced magnetron designs offer fast deposition rates,
i.e. up to 2 microns per minute can be achieved for copper.
Using the dual gas control system, compounds can be deposited by
reactive sputtering. Control of gas pressure, gas ratios and gas
flow rates allow the sputtering processes to be reproducibility
controlled easily giving reproducible results.
The Auto 500 provides economic sputter etching by utilizing a power
selector switch to divert power from the main sputtering power supply
to the substrate holder, avoiding the need for an additional power
supply. Substrates can have a DC or RF bias potential applied during
sputtering to modify film properties and to alter surface chemical
reactivity or net deposition rates. Biasing affects film morphology
dramatically and can be used to control film stoichiometry.
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